Perpendicular magnetization of CoZr/Pt multilayers
AbstractRecently, the perpendicular magnetization of tunnel junctions has been proposed as a way to reduce the size of spin-transfer torque random access memories. In order to determine the free layer...
View ArticleCurrent-driven switching property of MgO-based magnetic tunnel junctions with...
AbstractSpin-transfer torque enables magnetization switching by passing a spin-polarized current through nanostructures of spin valves or magnetic tunnel junctions. In this study, current-driven...
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